BF244A
器件描述：N-Channel RF Amplifier
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：78.24KB，共6页
Sponsor by e络盟器件资料摘要：
BF244A
BF244B
BF244C
N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications
operating up to 450 MHz, and for analog switching requiring low
capacitance. Sourced from Process 50.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BF244A / BF244B / BF244C
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Value Units
VDG Drain-Gate Voltage 30 V
VGS Gate-Source Voltage - 30 V
ID Drain Current 50 mA
IGF Forward Gate Current 10 mA
Tstg Storage Temperature Range -55 to +150 °C
S
G
D
TO-92
1997 Fairchild Semiconductor Corporation
BF244A / BF244B / BF244C
BF244B
BF244C
N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications
operating up to 450 MHz, and for analog switching requiring low
capacitance. Sourced from Process 50.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BF244A / BF244B / BF244C
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Value Units
VDG Drain-Gate Voltage 30 V
VGS Gate-Source Voltage - 30 V
ID Drain Current 50 mA
IGF Forward Gate Current 10 mA
Tstg Storage Temperature Range -55 to +150 °C
S
G
D
TO-92
1997 Fairchild Semiconductor Corporation
BF244A / BF244B / BF244C