1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0065C0077C0047C0070C0077 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
25 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
357 °C/W
Thermal Resistance, Junction to Case R
C0113JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40 — — Vdc
Collector–Base Breakdown Voltage (I
C
= 100 µAdc, I
E
= 0) V
(BR)CBO
40 — — Vdc
Emitter–Base Breakdown Voltage (I
E
= 10 µAdc, I
C
= 0) V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current (V
CB
= 20 Vdc, I
E
= 0) I
CBO
— — 100 nAdc
ON CHARACTERISTICS
DC Current Gain (I
C
= 1.0 mAdc, V
CE
= 10 Vdc) h
FE
65 — 220 —
Base–Emitter On Voltage (I
C
= 1.0 mAdc, V
CE
= 10 Vdc) V
BE(on)
0.65 0.7 0.74 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
— 600 — MHz
Common Emitter Feedback Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
re
— 0.28 0.34 pF
1. Pulse Test: Pulse Width C0118 300 C0109s, Duty Cycle C0118 2.0%.
Order this document
by BF240/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0070C0050C0052C0048
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER
REV 1