BF 2030W
Semiconductor Group
Jun-05-19981
Silicon N-Channel MOSFET Tetrode
Preliminary data
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type Marking Ordering Code Pin Configuration Package
BF 2030W NEs Q62702-F1774 1 = D 2 = S 3 = G1 4 = G2 SOT-343
Maximum Ratings
UnitParameter ValueSymbol
Drain-source voltage V
DS
V14
40 mAContinuos drain current I
D
Gate 1/gate 2 peak source current ±I
G1/2SM
10
Gate 1 (external biasing) +V
G1SE
7 V
200 mWTotal power dissipation, T
S
= 94 °C P
tot
Storage temperature T
stg
°C-55 ...+150
Channel temperature T
ch
150
Thermal Resistance
Channel - soldering point £ 280 K/WR
thchs
Semiconductor Group 1 1998-11-01