BF 2000
Semiconductor Group
Au -03-19981
Silicon N Channel MOSFET Tetrode
Target data sheet
• Short-channel transistor
with high S/C quality factor
• For low-noise, gain-controlled
input stages up to 1 GHz
VPS05178
2
1
3
4
PackageType Marking Ordering Code Pin Configuration
BF 2000 NDs Q62702-F1771 4 = G1 SOT-1431 = S 2 = D 3 = G2
Maximum Ratings
Parameter Symbol UnitValue
V
DS
12Drain-source voltage V
30
I
D
mAContinuos drain current
10
±I
G1/2SM
Gate 1/gate 2 peak source current
Total power dissipation, T
S
= 76 °C
mW
P
tot
200
Storage temperature - 55 ...+150 °C
T
stg
T
ch
150Channel temperature
Thermal Resistance
£ 370
K/WChannel - soldering point
R
thchs
Semiconductor Group 1 1998-11-01