Apr-23-2004
1
BF2030...
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
EHA07461
GND
G1
G2
Drain
AGC
HF
Input
HF Output
+DC
GG
V
G1
R
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type Package Pin Configuration Marking
BF2030
BF2030R
BF2030W
SOT143
SOT143R
SOT343
1= S
1= D
1= D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
NDs
NDs
ND
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage V
DS
8 V
Continuous drain current I
D
20 mA
Gate 1/ gate 2-source current ±I
G1/2SM
10
Gate 1 (external biasing) +V
G1SE
6 V
Total power dissipation
T
S
≤ 76 °C, BF2030, BF2030R
T
S
≤ 94 °C, BF2030W
P
tot

200
200
mW
Storage temperature T
stg
-55 ... 150
°C
Channel temperature T
ch
150