BF2000W
器件描述：Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：19.63KB，共3页
Sponsor by e络盟器件资料摘要：
BF 2000W
Semiconductor Group
Au -17-19981
Silicon N Channel MOSFET Tetrode
Target data sheet
• Short-channel transistor
with high S/C quality factor
• For low-noise, gain-controlled
input stages up to 1 GHz
VPS05605
4
2
1
3
PackageType Marking Ordering Code Pin Configuration
BF 2000W NDs Q62702-F1772 4 = G2 SOT-3431 = D 2 = S 3 = G1
Maximum Ratings
Parameter Symbol UnitValue
V
DS
12Drain-source voltage V
30
I
D
mAContinuos drain current
10
±I
G1/2SM
Gate 1/gate 2 peak source current
Total power dissipation, T
S
= 76 °C
mW
P
tot
200
Storage temperature - 55 ...+150 °C
T
stg
T
ch
150Channel temperature
Thermal Resistance
£ 280
K/WChannel - soldering point
R
thchs
Semiconductor Group 1 1998-11-01
Semiconductor Group
Au -17-19981
Silicon N Channel MOSFET Tetrode
Target data sheet
• Short-channel transistor
with high S/C quality factor
• For low-noise, gain-controlled
input stages up to 1 GHz
VPS05605
4
2
1
3
PackageType Marking Ordering Code Pin Configuration
BF 2000W NDs Q62702-F1772 4 = G2 SOT-3431 = D 2 = S 3 = G1
Maximum Ratings
Parameter Symbol UnitValue
V
DS
12Drain-source voltage V
30
I
D
mAContinuos drain current
10
±I
G1/2SM
Gate 1/gate 2 peak source current
Total power dissipation, T
S
= 76 °C
mW
P
tot
200
Storage temperature - 55 ...+150 °C
T
stg
T
ch
150Channel temperature
Thermal Resistance
£ 280
K/WChannel - soldering point
R
thchs
Semiconductor Group 1 1998-11-01