1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0082C0070 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
25 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
357 °C/W
Thermal Resistance, Junction to Case R
C0113JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
25 — —
Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 C0109Adc, I
E
= 0)
V
(BR)CBO
40 — —
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 C0109Adc, I
C
= 0)
V
(BR)EBO
4.0 — —
Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
I
CBO
— — 100
nAdc
Order this document
by BF199/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0070C0049C0057C0057
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER