BF 1012
Semiconductor Group
1 Sep-09-1998
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 12V
• Integrated stabilized bias network
VPS05178
2
1
3
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration PackageOrdering Code
3 = G2Q62702-F1487 1 = SMYs 4 = G1 SOT-143BF 1012 2 = D
Maximum Ratings
Parameter Symbol Value Unit
V
DS
16Drain-source voltage V
mA25
I
D
Continuos drain current
Gate 1/gate 2 peak source current 10
±I
G1/2SM
+V
G1SE
3Gate 1 (external biasing) V
mW
P
tot
Total power dissipation, T
S
£ 76 °C
200
Storage temperature °C-55 ...+150
T
stg
T
ch
150Channel temperature
Thermal Resistance
£ 370
K/WChannel - soldering point
R
thchs
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group 1 1998-11-01