Feb-18-2004
1
BF1005S...
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1 GHz
• Operating voltage 5 V
• Integrated biasing network
EHA07215
GND
G1
G2
Drain
AGC
HF
Input
HF Output
+DC
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BF1005S
BF1005SR
BF1005SW
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
NZs
NZs
NZ
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage V
DS
8 V
Continuous drain current I
D
25 mA
Gate 1/ gate 2-source current ±I
G1/2SM
10
Gate 1 (external biasing) +V
G1SE
3 V
Total power dissipation
T
S
≤ 76 °C, BF1005S, BF1005SR
T
S
≤ 94 °C, BF1005SW
P
tot

200
200
mW
Storage temperature T
stg
-55 ... 150
°C
Channel temperature T
ch
150






Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.