BF1005
器件描述：Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：51.96KB，共4页
Sponsor by e络盟器件资料摘要：
BF 1005
Semiconductor Group
1 Au -25-1998
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
• Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration PackageOrdering Code
3 = G2Q62702-F1498 1 = SMZs 4 = G1 SOT-143BF 1005 2 = D
Maximum Ratings
Parameter Symbol Value Unit
V
DS
8Drain-source voltage V
mA25
I
D
Continuos drain current
Gate 1/gate 2 peak source current 10
±I
G1/2SM
+V
G1SE
3Gate 1 (external biasing) V
mW
P
tot
Total power dissipation, T
S
£ 76 °C
200
Storage temperature °C- 55 ...+150
T
stg
T
ch
150Channel temperature
Thermal Resistance
£ 370
K/WChannel - soldering point
R
thchs
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group 1 1998-11-01
Semiconductor Group
1 Au -25-1998
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
• Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration PackageOrdering Code
3 = G2Q62702-F1498 1 = SMZs 4 = G1 SOT-143BF 1005 2 = D
Maximum Ratings
Parameter Symbol Value Unit
V
DS
8Drain-source voltage V
mA25
I
D
Continuos drain current
Gate 1/gate 2 peak source current 10
±I
G1/2SM
+V
G1SE
3Gate 1 (external biasing) V
mW
P
tot
Total power dissipation, T
S
£ 76 °C
200
Storage temperature °C- 55 ...+150
T
stg
T
ch
150Channel temperature
Thermal Resistance
£ 370
K/WChannel - soldering point
R
thchs
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group 1 1998-11-01