BDY90
HIGH CURRENT NPN SILICON TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPE
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDY90 is a silicon epitaxial planar NPN
power transistors in Jedec TO-3 metal case. They
are intented for use in switching and linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Value
VCBO Collector-base Voltage (IE = 0) 120 V
V
CEV
Collector-emitter Voltage (V
BE
= -1.5V) 120 V
V
CEO
Collector-emitter Voltage (I
B
= 0) 100 V
V
EBO
Emitter-base Voltage (I
C
= 0) 6 V
I
C
Collector Current 10 A
ICM Collector Peak Current (repetitive) 15 A
IB Base Current 2 A
P
tot
Total Dissipation at T
c
≤ 25
o
C60W
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
1
2
TO-3
1/4