COMSET SEMICONDUCTORS 1/3
BDY55 – BDY56
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDY55 60
V
CEO
Collector-Emitter Voltage
BDY56 120
V
BDY55 100
V
CBO
Collector-Base Voltage
BDY56 150
V
V
EBO
Emitter-Base Voltage
BDY55
BDY56
7V
I
C
Collector Current
BDY55
BDY56
15 A
I
B
Base Current
BDY55
BDY56
7 A
P
TOT
Power Dissipation @ T
C
= 25°
BDY55
BDY56
117 Watts
T
J
Junction Temperature
BDY55
BDY56
200 °C
T
S
Storage Temperature
BDY55
BDY56
65 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJ-C
Thermal Resistance, Junction to Case
BDY55
BDY56
1.5 °C/W
LF Large Signal Power Amplification
High Current Fast Switching
NPN SILICON TRANSISTORS, DIFFUSED MESA