BDX54F
SILICON PNP POWER
DARLINGTON TRANSISTOR
a73 STMicroelectronics PREFERRED
SALESTYPE
a73 MONOLITHIC DARLINGTON
CONFIGURATION
a73 INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX54F is a silicon Epitaxial-Base PNP
power transistor in monolithic Darlington
configuration, mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
INTERNAL SCHEMATIC DIAGRAM
January 2000
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 160 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 160 V
VEBO Emitter-base Voltage (IC = 0) 5 V
IC Collector Current 8 A
ICM Collector Peak Current 12 A
I
B
Base Current 0.2 A
P
tot Total Dissipation at Tc ≤ 25
o
C 60 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
®
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