BDX67
BDX67A
BDX67B
BDX67C
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NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
PNP complements are:
BDX66, BDX66A, BDX66B, BDX66C.
V
CEO
Collector - emitter voltage (open base)
V
CBO
Collector - base voltage (open emitter)
V
EBO
Emitter - base voltage (open collector)
I
C
Collector current
I
CM
Collector current (peak)
I
B
Base current
P
tot
Total power dissipation at T
mb
= 25°C
T
j
Maximum junction temperature
T
stj
Storage junction temperature
R
th j-mb
Thermal resistance, junction to mounting base.
60 80 100 120 V
80 100 120 140 V
5555V
16 A
20 A
250 mA
150 W
200 °C
-65 to +200 °C
1.17 K/ W
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS (T
case
=25°C unless otherwise stated)
c236 c239 c239 c239 c239 c237 c239 c239 c239 c239 c238
TO3 Package.
Case connected to collector.
BDX BDX BDX BDX
67 67A 67B 67C
BE
4.2
26.6 max.
39.
5 m
a
x
.
30
.
1
16.
9
10.9
2.5
G31G2e
G30
12.8
2
0
.3
m
a
x
.
9.0 max.