COMSET SEMICONDUCTORS 1/4
BDX 66, A, B, C
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDX66 -60
BDX66A -80
BDX66B -100
V
CEO
Collector-Emitter Voltage
BDX66C -120
V
BDX66 -60
BDX66A -80
BDX66B -100
V
CBO
Collector-Base Voltage
BDX66C -120
V
V
EBO
Emitter-Base Voltage
BDX66
BDX66A
BDX66B
BDX66C
-5.0 V
I
C(RMS)
BDX66
BDX66A
BDX66B
BDX66C
-16
I
C
Collector Current
I
CM
BDX66
BDX66A
BDX66B
BDX66C
-20
A
I
B
Base Current
BDX66
BDX66A
BDX66B
BDX66C
-0.25 A
P
T
Power Dissipation @ T
C
= 25°
BDX66
BDX66A
BDX66B
BDX66C
150
Watts
W/°C
T
J
Junction Temperature
T
S
Storage Temperature
BDX66
BDX66A
BDX66B
BDX66C
-55 to +200 °C
High current power darlingtons designed for power amplification and
switching applications.
PNP SILICON DARLINGTONS