BDX63
BDX63A
BDX63B
BDX63C
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
PNP complements are:
BDX62, BDX62A, BDX62B, BDX62C.
V
CEO
Collector - emitter voltage (open base)
V
CBO
Collector - base voltage (open emitter)
V
EBO
Emitter - base voltage (open collector)
I
C
Collector current
I
CM
Collector current (peak)
I
B
Base current
P
tot
Total power dissipation at T
case
= 25°C
T
j
Maximum junction temperature
T
stj
Storage junction temperature
R
th j-mb
Thermal resistance, junction to mounting base.
60 80 100 120 V
80 100 120 140 V
5555V
8A
12 A
150 mA
90 W
200 °C
-65 to 200 °C
1.94 °C / W
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS (T
case
=25°C unless otherwise stated)
GEC GEF GEF GEF GEF GED GEF GEF GEF GEF GEE
G20
TO3 Package.
Case connected to collector.
BDX BDX BDX BDX
63 63A 63B 63C
BE
4.2
26.6 max.
39.
5 m
a
x
.
30
.
1
16.
9
10.9
2.5
G31G2e
G30
12.8
2
0
.3
m
a
x
.
9.0 max.
Prelim. 7/93
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