©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX54/A/B/C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BDX54
: BDX54A
: BDX54B
: BDX54C
- 45
- 60
- 80
- 100
V
V
V
V
V
CEO
Collector-Emitter Voltage : BDX54
: BDX54A
: BDX54B
: BDX54C
- 45
- 60
- 80
- 100
V
V
V
V

V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 8 A
I
CP
*Collector Current (Pulse) - 12 A
I
B
Base Current - 0.2 A
P
C
Collector Dissipation (T
C
=25°C) 60 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BDX54
: BDX54A
: BDX54B
: BDX54C

I
C
= - 100mA, I
B
= 0 - 45
- 60
- 80
- 100
V
V
V
V
I
CBO
Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 200
- 200
- 200
- 200
µA
µA
µA
µA
I
CEO
Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
V
CE
= - 22V, I
B
= 0
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
- 500
- 500
- 500
- 500
µA
µA
µA
µA

I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 2 mA

h
FE
* DC Current Gain V
CE
= - 3V, I
C
= - 3A 750
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 3A, I
B
= - 12mA - 2 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= - 3A, I
B
= - 12mA - 2.5 V
V
F
* Parallel Diode Forward Voltage I
F
= - 3A
I
F
= - 8A
- 1.8
- 2.5
- 2.5 V
V
BDX54/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
Power Darlington TR
Complement to BDX53, BDX53A, BDX53B and BDX53C respectively
1.Base 2.Collector 3.Emitter
1
TO-220