BDX53B / BDX53C
BDX54B / BDX54C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
n STMicroelectronics PREFERRED
SALESTYPES
APPLICATIONS
n AUDIO AMPLIFIERS
n LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53B and BDX53C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in hammer drivers, audio amplifiers and
other medium power linear and switching
applications.
The complementary PNP types are BDX54B and
BDX54C respectively.

INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDX53B BDX53C
PNP BDX54B BDX54C
V
CBO
Collector-Base Voltage (I
E
= 0) 80 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 100 V
V
EBO
Emitter-base Voltage (I
C
=0) 5 V
I
C
Collector Current 8 A
I
CM
Collector Peak Current (repetitive) 12 A
I
B
Base Current 0.2 A
P
tot Total Dissipation at Tc ≤ 25
o
C 60 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
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