©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX53/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
45
60
80
100
V
V
V
V

V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 8 A
I
CP
*Collector Current (Pulse) 12 A
I
B
Base Current 0.2 A
P
C
Collector Dissipation (T
C
=25°C) 60 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BDX53
: BDX53A
: BDX53B
: BDX53C
I
C
= 100mA, I
B
= 0 45
60
80
100
V
V
V
V
I
CBO
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
200
200
200
200
µA
µA
µA
µA
I
CEO
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
V
CE
= 22V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
500
500
500
500
µA
µA
µA
µA

I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 2 mA

h
FE
* DC Current Gain V
CE
= 3V, I
C
= 3A 750
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 12mA 2 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 3A, I
B
= 12mA 2.5 V
V
F
* Parallel Diode Forward Voltage I
F
= 3A
I
F
= 8A
1.8
2.5
2.5 V
V
BDX53/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
Power Darlington TR
Complement to BDX54, BDX54A, BDX54B and BDX54C respectively
1.Base 2.Collector 3.Emitter
1
TO-220