BDX33B
器件描述：COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：35.88KB，共4页
Sponsor by e络盟器件资料摘要：
BDX33B BDX33C
BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34B and
BDX34C respectively.
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Unit
NPN BDX33B BDX33C
PNP BDX34B BDX34C
V
CBO
Collector-Base Voltage (I
E
= 0) 80 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 100 V
I
C
Collector Current 10 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 0.25 A
P
tot Total Dissipation at Tc ≤ 25
o
C 70 W
T
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
1/4
BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34B and
BDX34C respectively.
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Unit
NPN BDX33B BDX33C
PNP BDX34B BDX34C
V
CBO
Collector-Base Voltage (I
E
= 0) 80 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 100 V
I
C
Collector Current 10 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 0.25 A
P
tot Total Dissipation at Tc ≤ 25
o
C 70 W
T
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
1/4