BDX33
器件描述：Power Linear and Switching Applications
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：39.83KB，共5页
Sponsor by e络盟器件资料摘要：
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX33/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
45
60
80
100
V
V
V
V
I
C
Collector Current (DC) 10 A
I
CP
*Collector Current (Pulse) 15 A
I
B
Base Current 0.25 A
P
C
Collector Dissipation (T
C
=25°C) 70 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
BDX33/A/B/C
Power Linear and Switching Applications
High Gain General Purpose
Power Darlington TR
Complement to BDX34/34A/34B/34C respectively
1.Base 2.Collector 3.Emitter
1
TO-220
BDX33/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
45
60
80
100
V
V
V
V
I
C
Collector Current (DC) 10 A
I
CP
*Collector Current (Pulse) 15 A
I
B
Base Current 0.25 A
P
C
Collector Dissipation (T
C
=25°C) 70 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
BDX33/A/B/C
Power Linear and Switching Applications
High Gain General Purpose
Power Darlington TR
Complement to BDX34/34A/34B/34C respectively
1.Base 2.Collector 3.Emitter
1
TO-220