BDW94
器件描述：PNP Epitaxial Silicon Transistor
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：43.93KB，共5页
Sponsor by e络盟器件资料摘要：
©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BDW94/C Rev. B
B
D
W
94
/C
P
N
P
Epit
a
x
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l S
ilic
on
T
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a
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sis
t
or
January 2005
BDW94/C
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
• Power Darlington TR
• Complement to BDW93 and BDW93C Respectively
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BDW94
: BDW94C
-45
-100
V
V
V
CEO
Collector-Emitter Voltage
: BDW94
: BDW94C
-45
-100
V
V
I
C
Collector Current (DC) -12 A
I
CP
Collector Current (Pulse) * -15 A
I
B
Base Current -0.2 A
P
C
Collector Dissipation (T
C
= 25°C) 80 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
BDW94/C Rev. B
B
D
W
94
/C
P
N
P
Epit
a
x
ia
l S
ilic
on
T
r
a
n
sis
t
or
January 2005
BDW94/C
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
• Power Darlington TR
• Complement to BDW93 and BDW93C Respectively
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BDW94
: BDW94C
-45
-100
V
V
V
CEO
Collector-Emitter Voltage
: BDW94
: BDW94C
-45
-100
V
V
I
C
Collector Current (DC) -12 A
I
CP
Collector Current (Pulse) * -15 A
I
B
Base Current -0.2 A
P
C
Collector Dissipation (T
C
= 25°C) 80 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220