©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93CF
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 100 V
V
CEO
Collector-Emitter Voltage 100 V
I
C
Collector Current (DC) 12 A
I
CP
*Collector Current (Pulse) 15 A
I
B
Base Current 0.2 A
P
C
Collector Dissipation (T
C
=25°C) 30 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
(sus) * Collector-Emitter Sustaining Voltage I
C
= 100mA, I
B
= 0 100 V
I
CBO
Collector Cut-off Current V
CB
= 100V, I
E
= 0 100 µA
I
CEO
Collector Cut-off Current V
CE
= 100V, I
B
= 0 1 mA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 2 mA
h
FE
* DC Current Gain V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 5A
V
CE
= 3V, I
C
= 10A
1000
750
100
20000
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 5A, I
B
= 20mA
I
C
= 10A, I
B
= 100mA
2
3
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 5A, I
B
= 20mA
I
C
= 10A, I
B
= 100mA
2.5
4
V
V
V
F
* Parallel Diode Forward Voltage I
F
= 5A
I
F
= 10A
1.3
1.8
2
4
V
V
BDW93CF
Hammer Drivers,
Audio Amplifiers Applications
Power Darlington TR
Complement to BDW94CF respectively
1
1.Base 2.Collector 3.Emitter
TO-220F