©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Thermal Characteristics T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
45
60
80
100
V
V
V
V
I
C
Collector Current (DC) 12 A
I
CP
*Collector Current (Pulse) 15 A
I
B
Base Current 0.2 A
P
C
Collector Dissipation (T
C
=25°C) 80 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Value Units
R
θjc
Thermal Resistance Junction to Case 1.5 °C/W
BDW93/A/B/C
Hammer Drivers,
Audio Amplifiers Applications
Power Darlington TR
Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
1.Base 2.Collector 3.Emitter
1
TO-220