BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
a71 150 W at 25°C Case Temperature
a71 15 A Continuous Collector Current
a71 Minimum hFE of 750 at 3 V, 6 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
VCBO
45
60
80
100
120
V
Collector-emitter voltage (IB = 0) (see Note 1)
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
VCEO
45
60
80
100
120
V
Emitter-base voltage VEBO 5 V
Continuous collector current IC 15 A
Continuous base current IB 0.5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 150 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W
Unclamped inductive load energy (see Note 4) ½LIC2 100 mJ
Operating junction temperature range Tj -65 to +150 °C
Operating temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA -65 to +150 °C