BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
JUNE 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
a71 125 W at 25°C Case Temperature
a71 12 A Continuous Collector Current
a71 Minimum hFE of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDV65
BDV65A
BDV65B
BDV65C
VCBO
60
80
100
120
V
Collector-emitter voltage (IB = 0)
BDV65
BDV65A
BDV65B
BDV65C
VCEO
60
80
100
120
V
Emitter-base voltage VEBO 5 V
Continuous collector current IC 12 A
Peak collector current (see Note 1) ICM 15 A
Continuous base current IB 0.5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 260 °C