BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
AUGUST 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Designed for Complementary Use with
BDT61, BDT61A, BDT61B and BDT61C
a71 50 W at 25°C Case Temperature
a71 4 A Continuous Collector Current
a71 Minimum hFE of 750 at 1.5 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDT60
BDT60A
BDT60B
BDT60C
VCBO
-60
-80
-100
-120
V
Collector-emitter voltage (IB = 0)
BDT60
BDT60A
BDT60B
BDT60C
VCEO
-60
-80
-100
-120
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC -4 A
Continuous base current IB -0.1 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 50 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA -65 to +150 °C