V
CBO
Collector - Base voltage (I
E
= 0)
V
CEO
Collector - Emitter voltage (I
B
= 0)
V
EBO
Emitter - Base voltage (I
C
= 0)
I
E
, I
C
Emitter , Collector current
I
B
Base current
P
tot
Total power dissipation at T
case
GA3 75°C
T
stg
Storage Temperature
T
j
Junction Temperature
60V 80V 100V
60V 80V 100V
5V
15A
5A
90W
–65 TO 200°C
200°C
LAB
SEME
BDS10IG
BDS11IG
BDS12IG
MECHANICAL DATA
Dimensions in mm(inches)
ABSOLUTE MAXIMUM RATINGS (T
case
=25°C unless otherwise stated)
Prelim. 9/98
BDS10 BDS11 BDS12
SILICON NPN
EPITAXIAL BASE IN
TO257 METAL PACKAGE
FEATURES
• HERMETIC TO257 ISOLATED METAL
PACKAGES
HIGH RELIABILITY
MILITARY AND SPACE OPTIONS
SCREENING TO CECC LEVELS
ALSO AVAILABLE IN TO220 METAL AND
TO220 CERAMIC SURFACE MOUNT
PACKAGES
APPLICATIONS
POWER LINEAR AND SWITCHING
APPLICATIONS
GENERAL PURPOSE POWER
TO257 – TO257 Isolated Metal Package.
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
123
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.
41 (
0
.
4
1
0
)
10.
92 (
0
.
4
3
0
)
13.
3
8
(
0
.
527
)
13.
6
4
(
0
.
537
)
1
6
.
3
8 (
0
.
645)
1
6
.
8
9 (
0
.
665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
1
2
.
0
7 (
0
.
500)
1
9
.
0
5 (
0
.
750)
Dia.
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