Semiconductor Group 1 Nov-28-1996
BDP 952
PNP Silicon AF Power Transistor
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP951...BDP955 (NPN)
Type Marking Ordering Code Pin Configuration Package
BDP 952 BDP 952 Q62702-D1340 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 954 BDP 954 Q62702-D1342 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 956 BDP 956 Q62702-D1344 1 = B 2 = C 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
BDP 952
BDP 954
BDP 956
V
CEO
120
100
80
V
Collector-base voltage
BDP 952
BDP 954
BDP 956
V
CBO
140
120
100
Emitter-base voltage V
EBO
5
DC collector current I
C
3 A
Peak collector current I
CM
5
Base current I
B
200 mA
Peak base current I
BM
500
Total power dissipation, T
S
= 99°C P
tot
W
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 42 K/W
Junction - soldering point R
thJS
≤ 17
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu