BDP951 ... BDP955
1 Aug-06-2001
NPN Silicon AF Power Transistor
G01 For AF driver and output stages
G01 High collector current
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Complementary types: BDP952 ... BDP956 (PNP)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
BDP951
BDP953
BDP955
BDP 951
BDP 953
PDP 955
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
Maximum Ratings
Parameter BDP 951Symbol UnitBDP 955BDP 953
80 100
V
CEO
Collector-emitter voltage 120 V
Collector-base voltage
V
CBO
100 120 140
Emitter-base voltage
V
EBO
5 5 5
3 ADC collector current
I
C
Peak collector current 5
I
CM
Base current
I
B
200 mA
500
I
BM
Peak base current
Total power dissipation, T
S
= 99 °C P
tot
W3
Junction temperature
T
j
150 °C
-65 ... 150Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0117 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance