Semiconductor Group 1 Nov-28-1996
BDP 951
NPN Silicon AF Power Transistors
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP952...BDP956 (PNP)
Type Marking Ordering Code Pin Configuration Package
BDP 951 BDP 951 Q62702-D1339 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 953 BDP 953 Q62702-D1341 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 955 PDP 955 Q62702-D1343 1 = B 2 = C 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
BDP 951
BDP 953
BDP 955
V
CEO
120
100
80
V
Collector-base voltage
BDP 951
BDP 953
BDP 955
V
CBO
140
120
100
Emitter-base voltage V
EBO
5
DC collector current I
C
3 A
Peak collector current I
CM
5
Base current I
B
200 mA
Peak base current I
BM
500
Total power dissipation, T
S
= 99°C P
tot
3 W
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 42 K/W
Junction - soldering point R
thJS
≤ 17
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu