BDP947, BDP949
1 Aug-06-2001
Silicon NPN Transistor
G01 For AF driver and output stages
G01 High collector current
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Complementary types: BDP948, BDP950 (PNP)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
BDP947
BDP949
BDP 947
BDP 949
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
4 = C
4 = C
SOT223
SOT223
Maximum Ratings
Parameter BDP 947Symbol BDP 949 Unit
V60Collector-emitter voltage V
CEO
45
Collector-base voltage 45 60V
CBO
V
EBO
5 5Emitter-base voltage
3 ADC collector current I
C
Peak collector current 5I
CM
Base current I
B
200 mA
Peak base current I
BM
500
Total power dissipation, T
S
= 99 °C W3P
tot
°CJunction temperature 150T
j
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0117 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance