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器件描述:PNP Silicon AF Power Transistors
器件厂商:INFINEON [Infineon Technologies AG]
厂商主页:http://www.infineon.com/
文件大小:44.46KB
文件页数:4
PDF阅读:BDP948.pdf (点击阅读器件资料)
摘要:
BDP948, BDP950 1 Jul-06-2001 PNP Silicon AF Power Transistors G01 For AF driver and output stages G01 High collector current G01 High current gain G01 Low collector-emitter saturation voltage G01 Complementary types: BDP947, BDP949 (NPN) VPS05163 1 2 3 4 Type Marking Pin Configuration Package BDP948 BDP950 BDP 948 BDP 950 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E 4 = C 4 = C SOT223 SOT223 Maximum Ratings Parameter Symbol BDP948 BDP950 Unit Collector-emitter voltage V CEO 45 60 V Collector-base voltage V CBO 45 60 Emitter-base voltage V EBO 5 5 DC collector current I C 3 A Peak collector current I CM 5 Base current I B 200 mA Peak base current I BM 500 Total power dissipation, T S = 99 °C P tot 3 W Junction temperature T j 150 °C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS G0117 K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
相关器件:BDP950
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