BDP948, BDP950
1 Jul-06-2001
PNP Silicon AF Power Transistors
G01 For AF driver and output stages
G01 High collector current
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Complementary types: BDP947, BDP949 (NPN)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
BDP948
BDP950
BDP 948
BDP 950
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
4 = C
4 = C
SOT223
SOT223
Maximum Ratings
Parameter Symbol
BDP948 BDP950
Unit
Collector-emitter voltage V
CEO
45 60 V
Collector-base voltage V
CBO
45 60
Emitter-base voltage V
EBO
5 5
DC collector current I
C
3 A
Peak collector current I
CM
5
Base current I
B
200 mA
Peak base current I
BM
500
Total power dissipation, T
S
= 99 °C P
tot
3 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0117 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance