Semiconductor Group 1 Nov-28-1996
BDP 947
NPN Silicon AF Power Transistors
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP948, BDP950 (PNP)
Type Marking Ordering Code Pin Configuration Package
BDP 947 BDP 947 Q62702-D1335 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 949 BDP 949 Q62702-D1337 1 = B 2 = C 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
BDP 947
BDP 949
V
CEO
60
45
V
Collector-base voltage
BDP 947
BDP 949
V
CBO
60
45
Emitter-base voltage V
EBO
5
DC collector current I
C
3 A
Peak collector current I
CM
5
Base current I
B
200 mA
Peak base current I
BM
500
Total power dissipation, T
S
= 99°C P
tot
3 W
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 42 K/W
Junction - soldering point R
thJS
≤ 17
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu