1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0079C0110C0101 C0087C0097C0116C0116 C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BDC02D Unit
Collector–Emitter Voltage V
CEO
–100 Vdc
Collector–Base Voltage V
CBO
–100 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–0.5 Adc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
125 °C/W
Thermal Resistance, Junction to Case R
C0113JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Voltage
(I
C
= –10 mA, I
B
= 0)
V
(BR)CEO
–100 — Vdc
Collector Cutoff Current
(V
CB
= –100 V, I
E
= 0)
I
CBO
— –0.1 C0109Adc
Emitter Cutoff Current
(I
C
= 0, V
EB
= –5.0 V)
I
EBO
— –100 nAdc
Order this document
by BDC02D/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0068C0067C0048C0050C0068
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER