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BDC01D
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：One Watt Amplifier Transistor 器件厂商：MOTOROLA [Motorola, Inc] 厂商主页：http://www.freescale.com/ 文件大小：130.32KB 文件页数：4 PDF阅读：BDC01D.pdf (点击阅读器件资料) 摘要： 1Motorola Small–Signal Transistors, FETs and Diodes Device Data C0079C0110C0101 C0087C0097C0116C0116 C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114 NPN Silicon MAXIMUM RATINGS Rating Symbol BDC01D Unit Collector–Emitter Voltage V CEO 100 Vdc Collector–Base Voltage V CBO 100 Vdc Emitter–Base Voltage V EBO 5.0 Vdc Collector Current — Continuous I C 0.5 Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 1.0 8.0 Watts mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 2.5 20 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R C0113JA 125 °C/W Thermal Resistance, Junction to Case R C0113JC 50 °C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Voltage (I C = 10 mA, I B = 0) V (BR)CEO 100 — Vdc Collector Cutoff Current (V CB = 100 V, I E = 0) I CBO — 0.1 C0109Adc Emitter Cutoff Current (I C = 0, V EB = 5.0 V) I EBO — 100 nAdc Order this document by BDC01D/D C0077C0079C0084C0079C0082C0079C0076C0065 SEMICONDUCTOR TECHNICAL DATA C0066C0068C0067C0048C0049C0068 CASE 29–05, STYLE 14 TO–92 (TO–226AE) 1 2 3 ? Motorola, Inc. 1996 COLLECTOR 2 3 BASE 1 EMITTER 相关器件：

BDC01D

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：One Watt Amplifier Transistor
器件厂商：MOTOROLA [Motorola, Inc]
厂商主页：http://www.freescale.com/
文件大小：130.32KB
文件页数：4
PDF阅读：BDC01D.pdf (点击阅读器件资料)

摘要：
1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0079C0110C0101 C0087C0097C0116C0116 C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BDC01D Unit
Collector–Emitter Voltage V
CEO
100 Vdc
Collector–Base Voltage V
CBO
100 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
0.5 Adc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
125 °C/W
Thermal Resistance, Junction to Case R
C0113JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Voltage
(I
C
= 10 mA, I
B
= 0)
V
(BR)CEO
100 — Vdc
Collector Cutoff Current
(V
CB
= 100 V, I
E
= 0)
I
CBO
— 0.1 C0109Adc
Emitter Cutoff Current
(I
C
= 0, V
EB
= 5.0 V)
I
EBO
— 100 nAdc
Order this document
by BDC01D/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0068C0067C0048C0049C0068
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
1
2
3
? Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER

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