BD909
器件描述：COMPLEMENTARY SILICON POWER TRANSISTORS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：97.27KB，共6页
Sponsor by e络盟器件资料摘要：
BD909/911
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
n STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD909 BD911
PNP BD910 BD912
V
CBO
Collector-Base Voltage (I
E
= 0) 80 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 100 V
V
EBO
Emitter-Base Voltage (I
C
=0) 5 V
I
E
,I
C
Collector Current 15 A
I
B
Base Current 5 A
P
tot Total Dissipation at Tc ≤ 25
o
C 90 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
1/6
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
n STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD909 BD911
PNP BD910 BD912
V
CBO
Collector-Base Voltage (I
E
= 0) 80 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 100 V
V
EBO
Emitter-Base Voltage (I
C
=0) 5 V
I
E
,I
C
Collector Current 15 A
I
B
Base Current 5 A
P
tot Total Dissipation at Tc ≤ 25
o
C 90 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
1/6