2SK3608
器件资料摘要：
1
Item Symbol Ratings Unit
Drain-source voltage VDS 200
VDSX *5 170
Continuous drain current ID ±13
Pulsed drain current ID(puls] ±52
Gate-source voltage VGS ±30
Non-repetitive Avalanche current IAS *2 13
Maximum Avalanche Energy EAS *1 175
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
1.67
Tc=25
°C
50
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3608-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V
ID=6.5A VGS=10V
ID=6.5A VDS=25V
VCC=48V ID=6.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
2.5
75.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=100V
ID=13A
VGS=10V
L=100µH Tch=25°C
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
200
3.0 5.0
25
250
10 100
131 170
5.5 11
770 1155
110 165
5 7.5
12 18
2.6 3.9
22 33
6.1 9.2
21 31.5
812
5 7.5
13
1.10 1.65
0.15
0.88
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*1 L=1.65mH, Vcc=48V *2 Tch 150°C
=
<
*4 VDS 200V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V
P4
Item Symbol Ratings Unit
Drain-source voltage VDS 200
VDSX *5 170
Continuous drain current ID ±13
Pulsed drain current ID(puls] ±52
Gate-source voltage VGS ±30
Non-repetitive Avalanche current IAS *2 13
Maximum Avalanche Energy EAS *1 175
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
1.67
Tc=25
°C
50
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3608-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V
ID=6.5A VGS=10V
ID=6.5A VDS=25V
VCC=48V ID=6.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
2.5
75.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=100V
ID=13A
VGS=10V
L=100µH Tch=25°C
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
200
3.0 5.0
25
250
10 100
131 170
5.5 11
770 1155
110 165
5 7.5
12 18
2.6 3.9
22 33
6.1 9.2
21 31.5
812
5 7.5
13
1.10 1.65
0.15
0.88
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*1 L=1.65mH, Vcc=48V *2 Tch 150°C
=
<
*4 VDS 200V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V
P4