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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BD787

器件描述:Complementary Plastic Silicon Power Transistors
器件厂商:MOTOROLA [Motorola, Inc]
文件大小:148.19KB,共6页
Sponsor by e络盟
器件资料摘要:
1
Motorola Bipolar Power Transistor Device Data
C0067C0111C0109C0112C0108C0101C0109C0101C0110C0116C0097C0114C0121 C0080C0108C0097C0115C0116C0105C0099 C0083C0105C0108C0105C0099C0111C0110
C0080C0111C0119C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
. . . designed for lower power audio amplifier and low current, high–speed switching
applications.
• Low Collector–Emitter Sustaining Voltage —
V
CEO(sus)
60 Vdc (Min) — BD787, BD788
• High Current–Gain — Bandwidth Product —
f
T
= 50 MHz (Min) @ I
C
= 100 mAdc
• Collector–Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
BD787
BD788
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
V
CEO
ÎÎÎÎÎÎ
60
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
V
CBO
ÎÎÎÎÎÎ
80
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
V
EBO
ÎÎÎÎÎÎ
6.0
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continous
— Peak
ÎÎÎÎÎ
ÎÎÎÎÎ
I
C
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.0
8.0
ÎÎÎ
ÎÎÎ
Adc
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
I
B
ÎÎÎÎÎÎ
1.0
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ T
C
= 25°C
Derate Above 25C0095C
ÎÎÎÎÎ
P
D
ÎÎÎÎÎÎ
15
0.12
ÎÎÎ
Watts
W/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range ÎÎÎÎÎ
ÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
ÎÎÎ
C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
R
θJC
ÎÎÎÎÎÎ
8.34
ÎÎÎ
C0095C/W
16
12
0
20 40 60 100 120 140 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
80
4.0
8.0
1.6
1.2
0
0.4
0.8
P
D
, POWER DISSIP
A
TION (W
A
TTS)
T
A
T
C
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD787/D
 Motorola, Inc. 1995
C0066C0068C0055C0056C0055
C0066C0068C0055C0056C0056
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
15 WATTS
CASE 77–08
TO–225AA TYPE
C0078C0080C0078
C0080C0078C0080
REV 7