COMSET SEMICONDUCTORS 1/3
The BD683 is NPN eptaxial-base transistors in monolithic Darlington circuit for audio
and video applications.
They are mounted in Jedec TO-126 plastic package.
PNP complement is BD684.
SILICON DARLINGTON POWER
TRANSISTORS
NPN BD683
PNP BD684
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
CEO
Collector-Emitter Voltage 120 V
V
CBO
Collector-Base Voltage 140 V
V
EBO
Emitter-Base Voltage 5V
I
C
4
I
C
Collector Current
I
CM
6
A
I
B
Base current (peak value) I
BM
0.1 A
P
T
Total power Dissipation @ T
mb
= 25°C 40 Watts
T
J
Junction Temperature 150 °C
T
Stg
Storage Temperature -65 to +150 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJ-mb
Thermal Resistance, Junction to mouting base 3.12 K/W
R
thJ-a
Thermal Resistance, Junction to ambient in free air 100 K/W