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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BD670

器件描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
器件厂商:STMICROELECTRONICS [STMicroelectronics]
厂商主页:http://www.st.com/
文件大小:87.96KB,共6页
Sponsor by e络盟
器件资料摘要:
BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
n SGS-THOMSON PREFERRED SALESTYPES
n COMPLEMENTARY PNP - NPN DEVICES
n MONOLITHIC DARLINGTON
CONFIGURATION
n INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
n LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD678,
BD678A, BD680, BD680A and BD682
respectively.
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ.= 7K Ω R
2
Typ.= 230 Ω
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD677/A BD679/A BD681
PNP BD678/A BD680/A BD682
V
CBO
Collector-Base Voltage (I
E
=0) 60 80 100 V
VCEO Collector-Emitter Voltage (IB =0) 60 80 100 V
V
EBO
Emitter-Base Voltage (I
C
=0) 5 V
IC Collector Current 4 A
I
CM
Collector Peak Current 6 A
I
B
Base Current 0.1 A
Ptot Total Dissipation at Tc ≤ 25
o
C4W
stg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
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