BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
MAY 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Designed for Complementary Use with
BD646, BD648, BD650 and BD652
a71 62.5 W at 25°C Case Temperature
a71 8 A Continuous Collector Current
a71 Minimum hFE of 750 at 3 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BD645
BD647
BD649
BD651
VCBO
80
100
120
140
V
Collector-emitter voltage (IB = 0)
BD645
BD647
BD649
BD651
VCEO
60
80
100
120
V
Emitter-base voltage VEBO 5 V
Continuous collector current IC 8 A
Peak collector current (see Note 1) ICM 12 A
Continuous base current IB 0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 62.5 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W
Unclamped inductive load energy (see Note 4) ½LIC2 50 mJ
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 260 °C