BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Designed for Complementary Use with the
BD545 Series
a71 85 W at 25°C Case Temperature
a71 15 A Continuous Collector Current
a71 Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BD546
BD546A
BD546B
BD546C
VCBO
-40
-60
-80
-100
V
Collector-emitter voltage (IB = 0) (see Note 1)
BD546
BD546A
BD546B
BD546C
VCEO
-40
-60
-80
-100
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC -15 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 85 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W
Operating free air temperature range TA -65 to +150 °C
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 260 °C