1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage VDS 500
Continuous drain current ID ±12
Pulsed drain current ID(puls] ±48
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 12
Maximum Avalanche Energy EAS *1 217
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.16
Tc=25
°C
50
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3469-01MR FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=6A VGS=10V
ID=6A VDS=25V
VCC=300V ID=6A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
2.50
58.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=12A
VGS=10V
L=2.77mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
500
3.0 5.0
25
250
10 100
0.40 0.52
5.5 11
1200 1800
140 210
6.0 9.0
17 26
15 23
34 51
711
30 45
11 16.5
10 15
12
1.00 1.50
0.7
4.5
-55 to +150
Outline Drawings
*1 L=2.77mH, Vcc=50V *2 Tch=150°C
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*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
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Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series