©2000 Fairchild Semiconductor International Rev. A, February 2000
BD534/
536/
538
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD534
: BD536
: BD538
- 45
- 60
- 80
V
V
V

V
CEO
Collector-Emitter Voltage : BD534
: BD536
: BD538
- 45
- 60
- 80
V
V
V

V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 8 A
I
B
Base Current - 1 A
P
C
Collector Dissipation (T
C
=25°C) 50 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current : BD534
: BD536
: BD538
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
- 100
- 100
- 100
µA
µA
µA

I
CES
Collector Cut-off Current : BD534
: BD536
: BD538
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
- 100
- 100
- 100
µA
µA
µA

I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 1 mA

h
FE
* DC Current Gain : ALL DEVICE
: BD534/536
: BD538
: BD534/536
: BD538
V
CE
= -2 V, I
C
= - 500mA
V
CE
= - 5V, I
C
= - 10mA
V
CE
= - 2V, I
C
= - 2A
40
20
15
25
15

h
FE

h
FE
Groups
J : ALL DEVICE

K : ALL DEVICE
V
CE
= - 2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
V
CE
= -2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
30
15
40
20

75
100
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 2A, I
B
= - 0.2A
I
C
= - 6A, I
B
= - 0.6A - 0.8
- 0.8 V
V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= - 2V, I
C
= - 2A - 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= - 1V, I
C
= - 500mA 3 12 MHz
BD534/536/538
Medium Power Linear and Switching
Applications
Low Saturation Voltage
Complement to BD533, BD535 and BD537 respectively
1.Base 2.Collector 3.Emitter
1
TO-220