©2000 Fairchild Semiconductor International Rev. A, February 2000
BD533/
535/
537
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD533
: BD535
: BD537
45
60
80
V
V
V
V
CES
Collector-Emitter Voltage : BD533
: BD535
: BD537
45
60
80
V
V
V

V
CEO
Collector-Emitter Voltage : BD533
: BD535
: BD537
45
60
80
V
V
V

V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 8 A
I
B
Base Current 1 A
P
C
Collector Dissipation (T
C
=25°C) 50 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current : BD533
: BD535
: BD537
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
100
100
100
µA
µA
µA

I
CES
Collector Cut-off Current : BD533
: BD535
: BD537
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
100
100
100
µA
µA
µA

I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA

h
FE
* DC Current Gain : BD533/535
: BD537
: ALL DEVICE
: BD533/535
: BD537
V
CE
= 5V, I
C
= 10mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 2A
20
15
40
25
15

h
FE
h
FE
Groups
J : ALL DEVICE
K : ALL DEVICE

V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
30
15
40
20
75
100
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 0.2A
I
C
= 6A, I
B
= 0.6A 0.8
0.8 V
V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= 2V, I
C
= 2A 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= 1V, I
C
= 500mA 3 12 MHz
BD533/535/537
Medium Power Linear and Switching
Applications
Low Saturation Voltage
Complement to BD534, BD536 and BD538 respectively
1.Base 2.Collector 3.Emitter
1
TO-220