2SK3440
2002-03-04 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3440

Switching Regulator, DC-DC Converter Applications
Motor Drive Applications


• Low drain-source ON resistance: R
DS (ON)
= 6.5 mΩ (typ.)
• High forward transfer admittance: |Y
fs
| = 30 S (typ.)
• Low leakage current: I
DSS
= 100 µA (V
DS
= 60 V)
• Enhancement-mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Tc = 25°C) ç
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
60 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
60 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
50
Drain current
Pulse (Note 1) I
DP
200
A
Drain power dissipation P
D
125 W
Single pulse avalanche energy (Note 2) E
AS
644 mJ
Avalanche current I
AR
50 A
Repetitive avalanche energy (Note 3) E
AR
12.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.00 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
= 50 V, T
ch
= 25°C (initial), L = 350 µH, R
G
= 25 Ω, I
AR
= 50 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mmç



JEDEC ―
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
1
2
3
4