2SK3211
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：64.17KB，共10页
Sponsor by e络盟器件资料摘要：
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-761A (Z)
2nd. Edition
February 1999
Features
• Low on-resistance
R
DS
= 60 mW typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-761A (Z)
2nd. Edition
February 1999
Features
• Low on-resistance
R
DS
= 60 mW typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source