©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD440/
442
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BD440
: BD442
- 60
- 80
V
V
V
CES
Collector-Emitter Voltage
: BD440
: BD442
- 60
- 80
V
V
V
CEO
Collector-Emitter Voltage
: BD440
: BD442
- 60
- 80
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 4 A
I
CP
*Collector Current (Pulse) - 7 A
I
B
Base Current - 1 A
P
C
Collector Dissipation (T
C
=25°C) 36 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 1 50 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: BD440
: BD442
I
C
= - 100mA, I
B
= 0 -60
-80
V
V
I
CBO
Collector Cut-off Current : BD440
: BD442
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
- 100
- 100
µA
µA
I
CES
Collector Cut-off Current : BD440
: BD442
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
- 100
- 100
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 1 mA
h
FE
* DC Current Gain : BD440
: BD442
: BD440
: BD442
: BD440
: BD442
V
CE
= - 5V, I
C
= - 10mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
20
15
40
40
25
15
140
140
140
140
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 2A, I
B
= - 0.2A - 0.8 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= - 5V, I
C
= - 10mA
V
CE
= -1 V, I
C
= - 2A
-0.58
- 1.5
V
V
f
T
Current Gain Bandwidth Product V
CE
= - 1V, I
C
= - 250mA 3 MHz
BD440/442
Medium Power Linear and Switching
Applications
• Complement to BD439, BD441 respectively
1
TO-126
1. Emitter 2.Collector 3.Base