UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1

QW-R201-024,A

MEDIUM POWER LOW VOLTAGE
TRANSISTOR

FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772S

APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator

TO-92
1

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS (Ta=25°C ,unless otherwise specified )
PARAMETERS SYMBOL RATING UNIT
Collector-base voltage VCBO 40 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 5 V
Collector dissipation( Ta=25°C) Pc 0.5 W
Collector current(DC) Ic 3 A
Collector current(PULSE) Ic 7 A
Base current IB 0.6 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C

ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector cut-off current ICBO VCB=30V,IE=0 1000 nA
Emitter cut-off current IEBO EB=3V,Ic=0 1000 nA
DC current gain(note 1) hFE1
hFE2
VCE=2V,Ic=20mA
VCE=2V,Ic=1A
30
100
200
150

400

Collector-emitter saturation voltage VCE(sat) Ic=2A,IB=0.2A 0.3 0.5 V
Base-emitter saturation voltage VBE(sat) Ic=2A,IB=0.2A 1.0 2.0 V
Current gain bandwidth product fT VCE=5V,Ic=0.1A 80 MHz
Output capacitance Cob VCB=10V,IE=0,f=1MHz 45 pF
Note 1:Pulse test:PW<300µs,Duty Cycle<2%

CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100-200 160-320 200-400